Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion

1998/01/01 by Yoshitaka Ohiso, Y. Ohiso, C. Amano +6
Engineering · Physics and Astronomy · #Semiconductor Lasers and Optical Devices #Photonic and Optical Devices #Semiconductor Quantum Structures and Devices

paper · doi:10.1109/3.720226

Abstract

We propose a novel design for a 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL) structure employing double InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. The fundamental features of InP/GaAs wafer fusion are examined as a function of load pressure. We demonstrate an exact 1.55-/spl mu/m emission wavelength in the CW mode with low threshold voltage (2.1 V) and low threshold current density (1.8 kA/cm/sup 2/).

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