Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers

1997/08/01 by Hiroshi Okamoto, Takashi Tadokoro, Yasuhiro Kondo Yasuhiro Kondo +3
Engineering · Physics and Astronomy · #Semiconductor Lasers and Optical Devices #Photonic and Optical Devices #Semiconductor Quantum Structures and Devices

paper · doi:10.1143/jjap.36.5365

Abstract

A non-destructive characterization method for epitaxial wafers of vertical-cavity surface-emitting laser (VCSEL) before device processing, and a way for reproducible fabrication of the distributed Bragg reflector (DBR) using this method, are discussed. The DBR, active layer, and cavity length are successfully characterized by using YAG-laser-excited PL measurement and reflectivity-spectrum measurement. For a buried-heterostructure VCSEL, cavity length is evaluated by using a newly assembled small-area-spectral-reflectance measurement system. It is also shown that the cavity length can be tuned by using chemical etching.

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