2006/01/13 by Ravi Bhat, J. E. Sipe, Bhat, R. D. R. +1
Engineering · Physics and Astronomy · #FOS: Physical sciences #Other Condensed Matter (cond-mat.other) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Semiconductor materials and interfaces
paper · pdf · doi:10.48550/arxiv.cond-mat/0601277
openalex publication_date 2006/01/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection can all be controlled. We calculate injection spectra for these effects using a 14x14 k.p Hamiltonian including remote band effects for five bulk semiconductors of zinc-blende symmetry: InSb, GaSb, InP, GaAs, and ZnSe. Microscopic expressions for spin-current injection and spin control accounting for spin split bands are presented. We also present analytical expressions for the injection spectra derived in the parabolic-band approximation and compare these with the calculation nonperturbative in k.