2002/06/18 by G. Schmidt, C. Gould, Schmidt, G. +13
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0206347
tex file, 4 eps figures
arxiv created 2002/06/18 · openalex publication_date 2002/06/18 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Semiconductor spintronics will need to control spin injection phenomena in the non-linear regime. In order to study these effects we have performed spin injection measurements from a dilute magnetic semiconductor [(Zn,Be,Mn)Se] into nonmagnetic (Zn,Be)Se at elevated bias. When the applied voltage is increased to a few mV we find a strong decrease of the spin injection efficiency. The observed behavior is modelled by extending the charge-imbalance model for spin injection to include band bending and charge accumulation at the interface of the two compounds. We find that the observed effects can be attributed to repopulation of the minority spin level in the magnetic semiconductor.