Quantitative detection of electrically injected spin accumulation in GaAs using the magneto-optical Kerr effect

2005/07/25 by A. V. Kimel, Kimel, A. V., A. Kirilyuk +15
Engineering · Physics and Astronomy · #FOS: Physical sciences #Magneto-Optical Properties and Applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0507575

Submitted to PRL

arxiv created 2005/07/25 · openalex publication_date 2005/07/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Using an ultra sensitive magneto-optical Kerr rotation setup we have observed electrical spin injection from (Zn,Mn)Se into bulk GaAs and quantified the spin injection efficiency. The current induced contribution was carefully separated from possible artifacts and studied as a function of voltage and external magnetic field. Our measurements allow us to estimate the concentration of the electrically injected spins into GaAs to be approximately 0.4×10¹⁵cm^-3 at a reverse bias of 0.7 V.

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