1998/07/24 by O. Z. Alekperov, Alekperov, O. Z.
Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/9807325
10 pages, latex, 4 figures in gif format, to be submitted to "Physica Status Solidi"
arxiv created 1998/07/24 · arxiv updated 2009/11/30
It is established experimentally that the low temperature photoelectric spectra line width of shallow impurities depends not only on charged impurity concentration Ni=2KNA and degree of samples compensation % K=NA/ND, as it was believed earlier.To a great extent it depends on the impurity distribution inhomogeneity also.For samples with homogeneous and inhomogeneous distribution of impurities line width dependence character on external electric fields, smaller than break down one, are different.This broadening mechanism allows to control the quality of samples with nearly equal impurity concentrations.