Stark effect of shallow impurities in Si

2003/10/21 by G. D. J. Smit, G.D.J. Smit, Sven Rogge +7
Engineering · Materials Science · Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Semiconductor Quantum Structures and Devices #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/0310492

11 pages, 5 figures

arxiv created 2003/10/21 · openalex publication_date 2003/10/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01

Abstract

We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented, taking the bandstructure into account. A description as hydrogen-like impurities was used for accurate computation of energy levels and lifetimes up to large (several MV/m) electric fields. All results are discussed in connection with atomic scale electronics and solid state quantum computation.

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