2017/09/27 by O. Z. Alekperov, Alekperov, O., É. P. Nakhmedov +1
Engineering · Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.1709.09431
openalex publication_date 2017/09/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A novel breakdown (BD) mechanism of shallow impurity under the electric field at low temperatures is suggested for n-GaAs samples with the donor concentrations ND=1014 ÷1016cm-3 and the compensation degree K=(NA)/(ND)=0.3 ÷0.8 with acceptors of concentration NA in the external magnetic fields up to H=6.5~T. Diagnosis of the BD mechanism was performed by SI Zeeman and cyclotron resonance photoelectric spectroscopy methods in the wide interval of the electric field including the BD region too. The obtained results reveal that the BD electric field EBD does not correlate with K and the carriers mobility μ of the samples, which contradict to the well-known impact ionization mechanism (IIM). A serious discrepancy with IIM is that, EBD does not almost depend on the magnetic field up to H=6.5~T when E‖ H, though the SI ionization energy increases two times. The cyclotron resonance (CR) measurements show that the line width does not depend on the electric field for E