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Fluctuator model of memory dip in hopping insulators

2010/07/07 by Alexander L. Burin, Burin, Alexander L.
Engineering · Neuroscience · Physics and Astronomy · #Advanced Memory and Neural Computing #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Neural dynamics and brain function #Strongly Correlated Electrons (cond-mat.str-el) #Theoretical and Computational Physics #cond-mat.dis-nn #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.1007.1043

4 pages, 2 figures

openalex publication_date 2010/07/07 · arxiv created 2010/07/08 · arxiv updated 2010/07/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We show that the non-equilibrium dynamic in two-dimensional electron glasses close to metal-dielectric transition is dramatically sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, i. e. memory dip in a field dependence of conductance. Theory accounts qualitatively and quantitatively for the universal temperature and field dependencies of memory dip.

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