2014/07/08 by Pablo Stoliar, Stoliar, P., M. J. Rozenberg +9
Materials Science · #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Phase-change materials and chalcogenides #Solid-state spectroscopy and crystallography #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.1407.2038
openalex publication_date 2014/07/08 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.