2013/08/28 by Fumihiko Nakamura, Nakamura, Fumihiko, Mariko Sakaki +9 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.1308.6183
openalex publication_date 2013/08/28 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
Recently, application of electric field (E-field) has received considerable attention as a new method to induce novel quantum phenomena since application of E-field can tune the electronic states directly with obvious scientific and industrial advantages over other turning methods. However, E-field-induced Mott transitions are rare and typically require high E-field and low temperature. Here we report that the multiband Mott insulator Ca2RuO4 shows unique insulator-metal switching induced by applying a dry-battery level voltage at room temperature. The threshold field Eth ~40 V/cm is much weaker than the Mott gap energy. Moreover, the switching is accompanied by a bulk structural transition. Perhaps the most peculiar of the present findings is that the induced metal can be maintained to low temperature by a weak current.