2016/01/04 by Yu. N. Morokov, M. P. Fedoruk, Morokov, Yu. N. +10 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advanced Materials Characterization Techniques #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Silicon Nanostructures and Photoluminescence #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1601.00489
9 pages
arxiv created 2016/01/04 · openalex publication_date 2016/01/04 · arxiv updated 2016/01/05 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band. It is shown that the development of multilayer structures with vertically stacked quantum dots makes it possible to fabricate deep potential wells for electrons with vertical tunnel coupling.