Elastic Strain Fields In Lateral Double Ge/Si Quantum Dots

2017/01/23 by Morokov, Yu. N., Fedoruk, M. P.
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.1701.06654

Abstract

Simulations of the elastic strain fields for double Ge/Si quantum dots located on the same wetting layer are carried out. The cluster approximation is used for the atomistic model based on the Keating potential. The spatial distributions of the strain energy density and electron potential energy are calculated using clusters containing atoms of 150 coordination spheres. It is shown that the used cluster boundary conditions are close to the periodic boundary conditions.

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