2016/01/19 by Yu. N. Morokov, M. P. Fedoruk, М. П. Федорук +2
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1601.04762
19 pages. arXiv admin note: text overlap with arXiv:1601.00489
arxiv created 2016/01/19 · openalex publication_date 2016/01/19 · arxiv updated 2016/01/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
An atomistic model based on the Keating potential and the conjugate gradient method are used for simulation of the strain fields for single Ge/Si quantum dots. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band. It is shown that the strain field in silicon decreases sufficiently rapidly with distance from the center of the quantum dot, so the influence of the cluster boundary is observed only for very large quantum dots.