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Spin-dependent transport in the p-type ultra-narrow silicon quantum well

2006/08/29 by N. T. Bagraev, Bagraev, N. T., M. I. Bovt +16
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices #Superconductivity (cond-mat.supr-con) #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.supr-con

paper · pdf · doi:10.48550/arxiv.cond-mat/0608628

5 pages, 8 figures

arxiv created 2006/08/29 · openalex publication_date 2006/08/29 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher conductance oscillations caused by the Rashba spin-orbit interaction are found to interplay with the quantization phenomena induced by the creation of the two-dimensional subbands in Si-QW and the quantum subbands due to the Andreev reflection from the superconductor barriers.

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