2006/08/29 by N. T. Bagraev, N. G. Galkin, Bagraev, N. T. +9
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/0608632
5pages, 5 figures
arxiv created 2006/08/29 · openalex publication_date 2006/08/29 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the top gate voltage that are applied perpendicularly to the plane of the double-slit ring and revealed by the Aharonov-Bohm (AB) and Aharonov-Casher (AC) conductance oscillations, respectively. Firstly, the amplitude and phase sensitivity of the 0.7(2e2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction (SOI). Secondly, the values of the AC conductance oscillations caused by the Rashba SOI are found to take the fractional form with both the plateaus and steps as a function of the top gate voltage.