2001/02/06 by Leonid P. Rokhinson, L. J. Guo, L. Jay Guo +6
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0102107
Proceedings of ICPS-25 conference
arxiv created 2001/02/06 · arxiv updated 2009/11/30
We investigated electron transport through ultra small Si quantum dots. We found that the B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. In some dots the number of electrons N in the dot can be tuned starting from zero, and the total spin of the dot can be mapped as a function of N and B. For one of the dots we deduced that the dot becomes spontaneously polarized at N=6 with a large spin change ΔS=3/2, demonstrating the essential features of spin blockade. Surprisingly, for N>20, the transitions with ΔS>1/2 do not lead to the suppression of the corresponding peaks at low temperatures.