2015/09/29 by Paul K. Radtke, Radtke, Paul K., Lutz Schimansky-Geier +1
Engineering · Neuroscience · #Advanced Memory and Neural Computing #Emerging Technologies (cs.ET) #FOS: Computer and information sciences #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Neuroscience and Neural Engineering
paper · pdf · doi:10.48550/arxiv.1509.08885
openalex publication_date 2015/09/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, and thereby expand the original HP-memristor. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.