Non-volatile Complementary Resistive Switch-based Content Addressable Memory

2011/08/18 by Kavehei, Omid, Al-Sarawi, Said, Sriram, Sharath +4
#Emerging Technologies (cs.ET) #FOS: Computer and information sciences #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.1108.3716

Abstract

This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic→ON state transition that enables this novel CRS application.

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