2017/05/24 by Dong‐Pyo Han, Jong‐In Shim, Han, Dong-Pyo +3
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Thin-Film Transistor Technologies
paper · pdf · doi:10.48550/arxiv.1705.09557
openalex publication_date 2017/05/24 · openalex created_date 2017/06/05 · openalex updated_date 2026/07/28
In this paper, we aim to understand the apparent characteristics of IQE and I-V curve in AlGaInP and InGaN LED devices. For the analysis, we separate the current into radiative current and non-radiative current component by using the information of IQE. We carefully analyze each current component by ideality factor, S parameter, and the modified Shockley diode equation which is suitable for LED device. Through the analyses, it has been found that the characteristics of respective current components are basically similar for both samples while the physical origin of the potential drop induced by radiative current and the amount of double injection current induced non-radiative current by are different. Compared with AlGaInP LEDs, the InGaN LEDs have higher degrees of electron overflow initiated by low recombination rate in active region, causing both the efficiency droop and the higher operating voltage. To remedy this, the radiative recombination rate and/or the active volume should be increased further.