Analysis of Carrier Accumulation in Active Region by Energy Loss Mechanisms in InGaN Light-Emitting Diodes

2017/05/16 by Dong‐Pyo Han, Jong‐In Shim, Han, Dong-Pyo +3
Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces

paper · pdf · doi:10.48550/arxiv.1705.08251

openalex publication_date 2017/05/16 · openalex created_date 2017/06/05 · openalex updated_date 2026/07/28

Abstract

Carrier recombination and transport processes play key roles in determining the optoelectronic performances such as the efficiency droop and forward voltage in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs). In this work, we investigate the dominant carrier transport and recombination processes inside and outside the MQW region as a function of injection current from a new point of view by separately examining the carrier energy loss. Analysis of the measurement results reveals that the carrier accumulation and subsequent spill-over from the MQW active region to the clad is the most probable mechanism of explaining the efficiency and forward voltage variation with the injection current.

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