2017/05/16 by Dong‐Pyo Han, Jong‐In Shim, Han, Dong-Pyo +3
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.1705.08254
openalex publication_date 2017/05/16 · openalex created_date 2017/06/05 · openalex updated_date 2026/07/28
As an attempt to further elucidate the operating voltage increase in InGaN-based light-emitting diodes (LEDs), the radiative and nonradiative current components are separately analyzed in combination with the Shockley diode equation. Through the analyses, we have shown that the increase in operating voltage is caused by phase space filling effect in high injection. We have also shown that the classical Shockley diode equation is insufficient to comprehensively explain the I-V curve of the LED devices since the transport and recombination characteristics of respective current components are basically different. Hence, we have proposed a modified Shockley equation suitable for modern LED devices. Our analysis gives a new insight on the cause of the wall-plug-efficiency drop influenced by such factors as the efficiency droop and the high operating voltage in InGaN LEDs.