2025/03/28 by Hunter D. Ellis, Ellis, Hunter D., Botong Li +11
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Photocathodes and Microchannel Plates
paper · pdf · doi:10.48550/arxiv.2503.22123
openalex publication_date 2025/03/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/02
β-Ga2O3 is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the lack of viable p-type doping have hindered its full potential, particularly in the development of ambipolar devices. This work introduces a novel heterojunction diode (HD) that combines p-type carbon nanotubes (CNTs) with i/n-type β-Ga2O3 to overcome these limitations. For the first time, a CNT/β-Ga2O3 hetero-p-n-junction diode is fabricated. Compared to a traditional Schottky barrier diode (SBD) with the same β-Ga2O3 epilayer, the CNT/β-Ga2O3 HD demonstrates significant improvements, including a higher rectifying ratio (1.2 × 1011), a larger turn-on voltage (1.96 V), a drastically reduced leakage current at temperatures up to 300 °C, and a 26.7% increase in breakdown voltage. Notably, the CNT/β-Ga2O3 HD exhibits a low ideality factor of 1.02, signifying an ideal interface between the materials. These results underline the potential of CNT/β-Ga2O3 heterojunctions for electronic applications, offering a promising solution to current limitations in β-Ga2O3-based devices.