2023/05/30 by Jiarui Gong, Donghyeok Kim, Gong, Jiarui +40
Materials Science · Energy · #Ga2O3 and related materials #Advanced Photocatalysis Techniques
paper · pdf · doi:10.48550/arxiv.2305.19138
The β-Ga2O3 has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in β-Ga2O3 has hindered the development of Ga2O3-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type β-Ga2O3 can face severe challenges in further advancing the β-Ga2O3 bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/β-Ga2O3 p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/β-Ga2O3, double side surface passivation was achieved for both Si and β-Ga2O3 with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/β-Ga2O3 p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of β-Ga2O3-based transistors.