2023/11/27 by Rahaman, Imteaz, Ellis, Hunter D., Fu, Kai
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)
paper · doi:10.48550/arxiv.2311.16323
We report a novel approach for crafting robust diamond/\beta-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature, exhibits resilient electrical performance across a temperature spectrum up to 125°C, displaying minimal hysteresis-measuring as low as 0.2 V at room temperature and below 0.7 V at 125°C. Remarkably, the ideality factor achieves a record low value of 1.28, setting a new benchmark for diamond/ \beta-Ga2O3 heterojunctions. The rectification ratio reaches over 108 at different temperatures. This effortlessly fabricated and remarkably resilient diamond/Ga2O3 hetero-p-n-junction pioneers a novel pathway for the exploration and fabrication of heterojunctions for ultra-wide bandgap semiconductors with substantial lattice mismatch and different thermal expansion coefficients.