Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface

2015/01/01 by H. Deng, Hui Deng, K. Endo +3 · 4 citations
Engineering · Physics and Astronomy · #Metal and Thin Film Mechanics #GaN-based semiconductor devices and materials #Semiconductor materials and devices

paper · pdf · doi:10.1016/j.cirp.2015.04.002

Citations

• Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface
• Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing

Cited by

• Atomic surface of diamond induced by novel green photocatalytic chemical mechanical polishing with high material removal rate
• Multi-physical field coupling polishing of diamond for atomic-scale damage-free surface
• Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC. [europepmc]
• Polishing Approaches at Atomic and Close-to-Atomic Scale. [europepmc]