Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing

2013/01/01 by H. Deng, Hui Deng, K. Yamamura +1 · 7 citations
Engineering · Materials Science · #Advanced Surface Polishing Techniques #Diamond and Carbon-based Materials Research #Metal and Thin Film Mechanics

paper · doi:10.1016/j.cirp.2013.03.028

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• Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface
• Multi-physical field coupling polishing of diamond for atomic-scale damage-free surface
• Review of physicochemical-assisted nanomanufacturing processes for wide-bandgap semiconductor wafers
• Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC. [europepmc]
• Polishing Approaches at Atomic and Close-to-Atomic Scale. [europepmc]
• Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices. [europepmc]
• Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution [europepmc]