Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface

2015/01/01 by H. Deng, Hui Deng, K. Endo +3 · 72 citations
Engineering · Physics and Astronomy · #Abrasive #Chemical-mechanical planarization #Composite material #GaN-based semiconductor devices and materials #Gallium nitride #Layer (electronics) #Materials science #Metal and Thin Film Mechanics #Metallurgy #Plasma #Polishing #Semiconductor materials and devices #Surface finish #Surface roughness

paper · pdf · doi:10.1016/j.cirp.2015.04.002

published in CIRP Annals 64(1), 531-534 (Elsevier BV)

openalex publication_date 2015/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Citations

• Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface
• Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing

Cited by

• Atomic surface of diamond induced by novel green photocatalytic chemical mechanical polishing with high material removal rate
• Multi-physical field coupling polishing of diamond for atomic-scale damage-free surface
• Review of physicochemical-assisted nanomanufacturing processes for wide-bandgap semiconductor wafers
• Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC. [europepmc]
• Polishing Approaches at Atomic and Close-to-Atomic Scale. [europepmc]