2017/02/03 by Ali Naderi, Naderi, Ali, S. Mohammad Noorbakhsh +3
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Carbon Nanotubes in Composites #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.1702.01148
openalex publication_date 2017/02/03 · openalex created_date 2022/10/04 · openalex updated_date 2026/07/28
By developing a two-dimensional (2D) full quantum simulation, the attributes\nof carbon nanotube field-effect transistors (CNTFETs) in different temperatures\nhave been comprehensively investigated. Simulations have been performed by\nemploying the self-consistent solution of 2D Poisson-Schrodinger equations\nwithin the nonequilibrium Green's function (NEGF) formalism. Principal\ncharacteristics of CNTFETs such as current capability, drain conductance,\ntransconductance, and subthreshold swing (SS) have been investigated.\nSimulation results present that the drain conductance and on-current of the\nCNTFET increases as temperature raises from 250 to 500 K. Meanwhile the\non-/off-current ratio deteriorated due to faster growth in off-current. Also\nthe effects of temperature on short channel effects (SCEs) such as\ndrain-induced barrier lowering (DIBL) and threshold voltage roll-off have been\nstudied. Results show that the subthreshold swing and DIBL parameters are\nalmost linearly correlated, so the degradation of these parameters has the same\norigin and can be perfectly influenced by the temperature.\n