2015/03/16 by Roberto Marani, Marani, Roberto, Anna Gina Perri +1
Physics and Astronomy · #Computational Physics (physics.comp-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci #physics.comp-ph
paper · pdf · doi:10.48550/arxiv.1503.05116
9 pages, 2 figures; International Journal of Advances in Engineering and Technology, April 2015
arxiv created 2015/03/16 · arxiv updated 2015/03/18
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal parameters describing CNTFET behaviour in terms of saturation drain current, threshold voltage and M exponent in the knee region versus the temperature. To confirm the validity of the proposed thermal model, the simulations were performed in very different thermal conditions, obtaining I-V characteristics perfectly coincident with those of other models. The very low CPU calculation time makes the proposed model particularly suitable to be implemented in CAD applications.