Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

2021/11/15 by Toshiyuki Tabata, Tabata, Toshiyuki, Fabien Rozé +13
Engineering · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Semiconductor materials and devices #Silicon and Solar Cell Technologies #Thin-Film Transistor Technologies

paper · pdf · doi:10.48550/arxiv.2111.07577

openalex publication_date 2021/11/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a SOI layer partially amorphized by arsenic ion implantation and to activate the dopants. In a microsecond scale (~10^-6 s to ~10^-5 s) UV-LA process, monocrystalline solid phase recrystallization and dopant activation without junction deepening is evidenced, thus opening various applications in low thermal budget integration flows.

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