2025/01/01 by Ivan Podlesnykh, M. S. Kovalev, Е. Н. Кабачков +2 · 1 voice
Engineering · Materials Science · #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies #Thin-Film Transistor Technologies
paper · doi:10.3103/s1068335624602139
openalex publication_date 2025/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/13
Abstract— The extension of the spectral absorption range of crystalline silicon to the near- and mid-IR region is possible by doping it using ion implantation and subsequent annealing methods. Pulsed laser annealing makes it possible to eliminate ion-induced defects, which leads to recrystallization of the crystal structure, and activation of impurities. The crystal structure of the obtained samples, as well as their chemical, optical, and electrical characteristics are analyzed comprehensively.