DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION

1969/05/15 by H. J. Stein, F. L. Vook, J. A. Borders · 1 citation
Engineering · #Silicon and Solar Cell Technologies #Ion-surface interactions and analysis #Integrated Circuits and Semiconductor Failure Analysis

paper · doi:10.1063/1.1652670

Abstract

The production of divacancies in Si by 400-keV oxygen ion implantation (ΦI = 1.75 × 1014 cm−2, two sides) was detected by the characteristic divacancy optical absorption band at 1.8 μ. This band has been previously correlated with the presence of divacancies in electron- and neutron-irradiated silicon. Ion-produced divacancy annealing near 200°C was observed to correlate with neutron-produced divacancy annealing. Detailed comparisons of the annealing of electron-, neutron-, and ion-produced divacancies suggest that the ion-produced divacancies anneal primarily in regions with sink concentrations ≥ 1019 cm−3.

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