Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy

2024/01/22 by Yuichi Oshima, Encarnaciόn G. Vίllora, Kiyoshi Shimamura
#heteroepitaxy #β-Ga2O3

paper · doi:10.48505/nims.4351

Abstract

JOURNAL OF CRYSTAL GROWTH. 410 (2014)53-58

Related

• Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy
• Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
• Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire
• Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
• Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy