Atomic-scale imaging and charge state manipulation of NV centers by scanning tunneling microscopy

2025/04/17 by Raghavan, Arjun, Bae, Seokjin, Delegan, Nazar +2
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph)

paper · doi:10.48550/arxiv.2504.13280

Abstract

Nitrogen-vacancy (NV) centers in diamond are among the most promising solid-state qubit candidates, owing to their exceptionally long spin coherence times, efficient spin-photon coupling, room-temperature operation, and steadily advancing fabrication and integration techniques. Despite significant progress in the field, atomic-scale characterization and control of individual NV centers have remained elusive. In this work, we present a novel approach utilizing a conductive graphene capping layer to enable direct imaging and manipulation of NV^- defects via scanning tunneling microscopy (STM). By investigating over 40 individual NV^- centers, we identify their spectroscopic signatures and spatial configurations. Our dI/dV conductance spectra reveal the ground state approximately 300 meV below the Fermi level. Additionally, density-of-states mapping uncovers a two-lobed wavefunction aligned along the [111] crystallographic direction. Remarkably, we demonstrate the ability to manipulate the charge state of the NV centers from NV^- to NV⁰ through STM tip-induced gating. This work represents a significant advancement in the atomic-scale understanding and engineering of NV centers, paving the way for future quantum device development.

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