Chip-scale nanofabrication of single spins and spin arrays in diamond

2010/07/03 by David M. Toyli, Christoph D. Weis, Gregory D. Fuchs +2 · 2 citations
Physics and Astronomy · #cond-mat.mes-hall #cond-mat.mtrl-sci #quant-ph

paper · pdf · doi:10.1021/nl102066q

published as Nano Lett., Article ASAP (2010) · This paper has been withdrawn by the authors. 14 pages, 3 figures; Posting has been removed due to editorial request from ACS Nano Letters; This version has been removed by arXiv admin because it contains an inappropriate withdrawal notice

arxiv created 2010/07/03 · arxiv updated 2010/08/02

Abstract

We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.

Cited by

• Methods for traceable scanning magnetometry using single nitrogen vacancy centers in diamond: determining orientation, distance and localization
• Atomic-scale imaging and charge state manipulation of NV centers by scanning tunneling microscopy