Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain

2022/01/25 by Roberto da Silva, da Silva, Roberto, Gilson Wirth +1
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #Cold Atom Physics and Bose-Einstein Condensates #FOS: Physical sciences #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.2201.10659

openalex publication_date 2022/01/25 · openalex created_date 2022/04/03 · openalex updated_date 2026/07/28

Abstract

We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We are sure to have an important tool to guide developers in building and analyzing low-frequency noise in semiconductor devices.

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