2022/08/25 by P. Saraza-Canflanca, P. Sarazá-Canflanca, R. Castro-Lopez +10
Engineering · Mathematics · #Advancements in Semiconductor Devices and Circuit Design #Characterization (materials science) #Computer science #Constant (computer programming) #Distribution (mathematics) #Electrical engineering #Electronic engineering #Engineering #Integrated Circuits and Semiconductor Failure Analysis #Materials science #Mathematics #Nanotechnology #Perspective (graphical) #Physics #Process (computing) #Semiconductor materials and devices #Statistical physics #Time constant #Trapping
paper · doi:10.1109/ted.2022.3198383
openalex publication_date 2022/08/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
The origin of some time-dependent variability phenomena in FET technologies has been attributed to the charge carrier trapping/detrapping activity of individual defects present in devices. Although some models have been presented to describe these phenomena from the so-called defect-centric perspective, limited attention has been paid to the complex process that goes from the experimental data of the phenomena up to the final construction of the model and all its components, specifically the one that pertains to the time constant distribution. This article presents a detailed strategy aimed at determining the defect time constant distribution, specifically tailored for small area devices, using data obtained from conventional characterization procedures.