Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering

2004/11/25 by A. Malachias, Malachias, A., T. U. Schulli +11
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0411642

13 pages, 4 figures

arxiv created 2004/11/25 · arxiv updated 2009/12/01

Abstract

X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.

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