2025/09/14 by Jiwan Kim, Jaehyeong Jo, Kim, Jiwan +12
Engineering · Materials Science · #Integrated Circuits and Semiconductor Failure Analysis #Electron and X-Ray Spectroscopy Techniques #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2509.11037
We propose an experimental methodology for probing the energy barrier inhomogeneity at the metal/semiconductor interface without the need for time-consuming microscopic survey. It is based on the known statistical nature of the interfacial energy barrier and the use of planar tunnel junction as an array of parallelly-connected ballistic electron emission microscopy (BEEM) tips. In order to analyze a lump of local BEEM signals, we incorporate the Tung model into the Bell-Kaiser theory. To validate our theoretical strategies, we investigate the interfacial energy barrier inhomogeneity of Pt/4H-SiC(0001) junction as a model system.