1997/10/15 by U. Hohenester, Ulrich Hohenester, Hohenester, U. +9
Materials Science · Physics and Astronomy · #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Surface and Thin Film Phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/9710147
7 pages, Latex-APS, 2 postscript figures, http://www.icmm.csic.es/Pandres/pedro.htm, Proc. 10th Conf. on Microscopy of Sem. Mat. (Oxford, April 1997), E. T. Cullis, in print
arxiv created 1997/10/15 · openalex publication_date 1997/10/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We address the question of the spatial resolution of ballistic electron emission microscopy (BEEM) of Shottky barriers in Au(111)/Si(100) and Au(111)/Si(111) interfaces. A novel combination of Green-function and k-space Ensemble-Monte-Carlo techniques is used to obtain new insights into the spatial and energetic evolution of the STM-tip-induced electrons during their passage through the metallic layer before reaching the metal-semiconductor interface. In particular, it is shown how the effect of band-structure-induced directional focusing of the electrons enforces a reinterpretation of existing experimental data.