2004/07/08 by Dunwei Wang, Ying-Lan Chang, Wang, Dunwei +14
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0407186
33 pages, 9 figures. J. Am. Chem. Soc. In press
arxiv created 2004/07/08 · openalex publication_date 2004/07/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Germanium nanowires with p- and n-dopants were synthesized by chemical vapor deposition and used to construct complementary field effect transistors . Electrical transport and x-ray photoelectron spectroscopy data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hysteresis due to water molecules strongly bound to GeO2 on GeNWs is revealed. Different oxidation behavior and hysteresis characteristics and opposite band bending due to Fermi level pinning by interface states between Ge and surface oxides are observed for p- and n-type GeNWs. Vacuum annealing above 400C is used to remove surface oxides and eliminate hysteresis in GeNW FETs. High-k dielectric HfO2 films grown on clean GeNW surfaces by atomic layer deposition (ALD) using an alkylamide precursor is effective serving as the first layer of surface passivation. Lastly, the depletion length along the radial direction of nanowires is evaluated. The result suggests that surface effects could be dominant over the bulk properties of small diameter wires.