2008/12/26 by A. G. Novikau, Andrei G. Novikau, Novikau, Andrei G. +3
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Semiconductor materials and devices #Silicon Nanostructures and Photoluminescence #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0812.4680
9 pages, 4 fugures
arxiv created 2008/12/26 · openalex publication_date 2008/12/26 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and rutherford back scattering spectrometry, as well as electrically by measuring CV and IV characteristics. It was found that formation of a high density Ge dots took place due to oxidation induced Ge segregation. The dots are situated in the SiO2 on the average distance 5 nm from the substrate. Strong evidence of charge storage effect in the crystalline Ge nanodot layer is demonstrated by the hysteresis behavior of the high frequency CV curves.