2005/07/06 by Dunwei Wang, Ying‐Lan Chang, Ying-Lan Chang +6
Chemistry · Engineering · Physics and Astronomy · #Alkyl #Chemical engineering #Chemical modification #Chemical vapor deposition #Chemistry #FOS: Physical sciences #Germanium #Langmuir–Blodgett film #Layer (electronics) #Materials Science (cond-mat.mtrl-sci) #Materials science #Monolayer #Nanotechnology #Nanowire #Nanowire Synthesis and Applications #Organic chemistry #Passivation #Photonic and Optical Devices #Polymer chemistry #Semiconductor materials and devices #Silicon #Surface modification #X-ray photoelectron spectroscopy #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0507145
24 pages, 8 figures. to appear in J. Am. Chem. Soc., in press
openalex publication_date 2005/07/06 · arxiv created 2005/07/09 · arxiv updated 2009/12/01 · openalex created_date 2019/06/27 · openalex updated_date 2026/08/04
A simple method is developed to synthesize gram quantities of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed seed-particles loaded onto high surface area silica support. Various chemical functionalization schemes are investigated to passivate the GeNW surfaces using alkanethiols and alkyl Grignard reactions. The stability of functionalization against oxidation of germanium for various alkyl chain lengths is elucidated by X-ray photoelectron spectroscopy. Among all schemes tested, long chain alkanethiols (>=C12) are found to impart the most stable GeNW passivation against oxidation upon extended exposure to ambient air. Further, the chemically functionalized oxidation-resistant nanowires are soluble in organic solvents and can be readily assembled into close-packed Langmuir-Blodgett films potentially useful for future high performance electronic devices.