2010/07/30 by Cheng Cen, Daniela F. Bogorin, Cen, Cheng +4
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #Semiconductor materials and devices #cond-mat.mes-hall #quant-ph
paper · pdf · doi:10.48550/arxiv.1007.5468
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openalex publication_date 2010/07/30 · arxiv created 2010/09/13 · arxiv updated 2010/09/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation across a potential barrier controlled by the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.