2012/01/17 by E. R. Viana, Emilson Ribeiro Viana, J. C. Gonzalez +8
Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1201.3640
14 pages, 5 figures. Submited to "Nanoscale"
openalex publication_date 2012/01/17 · arxiv created 2013/03/07 · arxiv updated 2013/03/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage characteristics, and were analyzed considering the nanobelt as a quantum wire with rectangular cross-section hard-walls. The quantum confinement in the nanowires created conditions for the successive filling of the electron energy-subbands, as the gate voltage increases. When the source-drain voltage is changed the oscillations are not dislocated with respect to Vg, indicating flat-band subband energies at low temperatures. The subband separation was found to be in good agreement with the experimental observations, since the oscillations tend to disappear for T > 60K. Therefore, a novel quantum effect is reported in SnO2 nanobelts, which is expected to behave as bulk at zero electric gate fields.