2015/03/13 by P. Clapera, X. Jehl, Clapera, P. +11
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1503.03993
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (RF) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the RF signal, in good agreement with modeling.