2016/10/27 by Deepak Kumar Kaushik, Kaushik, Deepak Kumar, Kuleen Kumar +3
Engineering · Physics and Astronomy · #FOS: Physical sciences #Magnetic Field Sensors Techniques #Materials Science (cond-mat.mtrl-sci) #Surface and Thin Film Phenomena #Thin-Film Transistor Technologies
paper · pdf · doi:10.48550/arxiv.1610.08799
openalex publication_date 2016/10/27 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kfl~1) and degenerate semiconductor. The transport of charge carriers in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well- known metal-insulator transition; this transition is observed at 110 K in ITO thin films. The metal-insulator behaviour is explained by the quantum correction to the conductivity (QCC); this approach is based on the quantum-mechanical interference effects in the disordered systems. The insulating behaviour is attributed to the combined effect of the weak localization and the electron-electron interactions.