Temperature driven metal-insulator transition in thin films

2014/12/08 by R. K. Brojen Singh, Singh, R. K. Brojen
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #Theoretical and Computational Physics

paper · pdf · doi:10.48550/arxiv.1412.2573

openalex publication_date 2014/12/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We present the results of electron delocalization in thin films of finite thickness at finite tem- parature induced by thickness of the film and temparature. The two dimensional results show temparature induced metal-insulator transition (MIT) obtaining both insulating and metallic so- lutions. The localization length in insulating regime and zero frequency conductivity in metallic regime are found to be as a function of temparature and disorder parameter. Similarly, in thin films of finite thickness, delocalization of electronic states takes place induced by temparature as well as film thickness. Further, we could able to get critical temparature Tc for fixed thickness and critical thickness, b_c for fixed temparature. In metallic regime, conductivity is found to be as a function of film thickness, temparature and disorder.

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