2010/04/28 by David Kalok, Kalok, D., Ante Bilušić +7
Engineering · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Metal and Thin Film Mechanics #Quantum and electron transport phenomena #Superconductivity (cond-mat.supr-con)
paper · pdf · doi:10.48550/arxiv.1004.5153
openalex publication_date 2010/04/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We investigate experimentally the electric transport at the insulating side of the superconductor to insulator transition in thin TiN-films. At temperatures T > 50 mK we observe an Arrhenius-type conductance, with an activation energy depending logarithmically on the sample size. At high bias the current voltage (I-V) characteristics display a large current jump into an electron heating dominated regime. For the largest samples, and below 50 mK we observe a low-bias power law I ~ Valpha characteristics with an exponent alpha > 1 rapidly growing with decreasing temperature, which is expected for a binding-unbinding crossover of the charge-Berezinskii-Kosterlitz-Thouless type.